24 Patents
- US125987842026Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125882312026Method of Gap Filling for Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125686622026Semiconductor Devices and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US125016892025Nanostructure Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124179182025Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123879352025Dipole-engineered High-k Gate Dielectric and Method Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123826712025Semiconductor Structure and Manufacturing Method for the Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US123225952025Semiconductor Devices Devices Including Crystallized Layer Having Multiple Crystalline Orientations and Methods of Manufacture
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123007382025Semiconductor Device and Manufacturing Method for the Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US122439322025Negative-capacitance and Ferroelectric Field-effect Transistor (NCFET and FE-FET) Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121366592024Negative-capacitance and Ferroelectric Field-effect Transistor (NCFET and FE-FET) Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121257062024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120338532024Semiconductor Devices and Methods of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120209412024Dipole-engineered High-k Gate Dielectric and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120150662024Triple Layer High-k Gate Dielectric Stack for Workfunction Engineering
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118483702023Semiconductor Device and Manufacturing Method for the Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US118238942023Semiconductor Devices and Methods of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118241042023Method of Gap Filling for Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118174892023Negative-capacitance and Ferroelectric Field-effect Transistor (NCFET and FE-FET) Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117912162023Nanostructure Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117840522023Dipole-engineered High-k Gate Dielectric and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117770172023Negative-capacitance and Ferroelectric Field-effect Transistor (NCFET and FE-FET) Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117770312023Semiconductor Structure and Manufacturing Method for the Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US117106652023Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites