Patents/Inventors

Te-an Chen

TaichungTW16 patents

17 Patents

US124905102025
Semiconductor Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US124842882025
Semiconductor Device with First and Second Source/drain Epitaxial Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123639252025
Schottky Barrier Diode with Reduced Leakage Current and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US123082792025
Semiconductor Device Including an Isolation Region Having an Edge Being Covered and Manufacturing Method for the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US122611752025
Method for Forming Integrated Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US121320942024
Semiconductor Device Including Strained Transistor and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121144962024
Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120878092024
Semiconductor Device Having Capacitor and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119844902024
Schottky Barrier Diode with Reduced Leakage Current and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US119357912024
Semiconductor Devices Having Controlled S/D Epitaxial Shape
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119160792024
Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US118942732024
Methods of Forming a Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118548632023
Semiconductor Device Including an Isolation Region Having an Edge Being Covered and Manufacturing Method for the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US118550802023
Semiconductor Device and Method of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117990062023
Mask-free Process for Improving Drain to Gate Breakdown Voltage in Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117788152023
Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115692672023
Method for Forming Integrated Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites