116 Patents
- US125934562026Method of Fabricating Transistors and Stacked Non-planar Capacitors for Memory and Logic Applications
Kepler Computing Inc.
0 cites - US125622042026Non-linear Polar Material Based Multi-capacitor Bit-cell with Shared Gain Element with Series Transistor and Individual Access Transistor
Kepler Computing Inc.
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- US124462312025Method of Integrating a Capacitor Including a Non-linear Polar Material with a Transistor Through Wafer Bonding
Kepler Computing Inc.
0 cites - US124396062025Gate Coupled Non-linear Polar Material Based Capacitors for Memory and Logic
Kepler Computing Inc.
0 cites - US124126112025Time Decoupled Write Operations for Non-linear Polar Material Based Memory
Kepler Computing Inc.
0 cites - 0 cites
- US123962172025Encapsulation for Transition Metal Dichalcogenide Nanosheet Transistor and Methods of Fabrication
Intel Corporation
0 cites - US123763122025Methods of Fabricating Planar Capacitors on a Shared Plate Electrode
Kepler Computing Inc.
0 cites - US123693262025Capacitor Devices with Shared Electrode and Methods of Fabrication
Kepler Computing Inc.
0 cites - US123474762025Apparatus and Method to Improve Sensing Noise Margin in a Non-linear Polar Material Based Bit-cell
Kepler Computing Inc.
0 cites - US123493652025Drain Coupled Non-linear Polar Material Based Capacitors for Memory and Logic
Kepler Computing Inc.
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- US123494422025Thin Film Transistors Having Semiconductor Structures Integrated with 2D Channel Materials
Intel Corporation
0 cites - US123341272025Non-linear Polar Material Based Multi-capacitor High Density Bit-cell
Kepler Computing Inc.
0 cites - US123361842025Methods of Fabricating Trench Capacitors on a Shared Plate Electrode
Kepler Computing Inc.
0 cites - 0 cites
- US123241622025Stacked Capacitors with Shared Electrodes and Methods of Fabrication
Kepler Computing Inc.
0 cites - US123241632025Planar Capacitors with Shared Electrode and Methods of Fabrication
Kepler Computing Inc.
0 cites - 0 cites
- US122898942025Method of Fabricating Transistors and Stacked Planar Capacitors for Memory and Logic Applications
Kepler Computing Inc.
0 cites - 0 cites
- US122740712025Capacitor Integrated with a Transistor for Logic and Memory Applications
Kepler Computing Inc.
0 cites - US122667122025Transition Metal Dichalcogenide Nanosheet Transistors and Methods of Fabrication
Intel Corporation
0 cites - US122667202025Transistors with Monocrystalline Metal Chalcogenide Channel Materials
Intel Corporation
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- US121909462025Read Disturb Mitigation for Non-linear Polar Material Based Multi-capacitor Bit-cell
Kepler Computing Inc.
0 cites - 0 cites
- US121711032024Multi-input Threshold Gate Having Stacked and Folded Non-planar Capacitors
Kepler Computing Inc.
0 cites - US121479412024Iterative Monetization of Precursor in Process Development of Non-linear Polar Material and Devices
Kepler Computing Inc.
0 cites - US121423102024Method of Fabricating Pedestal Based Memory Devices Using Pocket Integration
Kepler Computing Inc.
0 cites - US121258932024Piezo-resistive Transistor Based Resonator with Anti-ferroelectric Gate Dielectric
Intel Corporation
0 cites - US121258952024Transition Metal Dichalcogenide (TMD) Layer Stack for Transistor Applications and Methods of Fabrication
Intel Corporation
0 cites - US121131172024Piezo-resistive Transistor Based Resonator with Ferroelectric Gate Dielectric
Intel Corporation
0 cites - US121086072024Devices with Continuous Electrode Plate and Methods of Fabrication
Kepler Computing Inc.
0 cites - US121086082024Memory Devices with Dual Encapsulation Layers and Methods of Fabrication
Kepler Computing Inc.
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- US120945112024Write Disturb Mitigation for Column Multiplexed Non-linear Polar Material Based Multi-capacitor Bit-cell
Kepler Computing Inc.
0 cites - US120949232024Rapid Thermal Annealing (RTA) Methodologies for Integration of Perovskite-material Based Memory Devices
Kepler Computing Inc.
0 cites - US120966382024One Transistor and N Memory Element Based Memory Bit-cell Having Stacked and Folded Planar Memory Elements with and Without Offset
Kepler Computing Inc.
0 cites - US120877302024Multi-input Threshold Gate Having Stacked and Folded Planar Capacitors with and Without Offset
Kepler Computing Inc.
0 cites - 0 cites
- US120625842024Iterative Method of Multilayer Stack Development for Device Applications
Kepler Computing Inc.
0 cites - US1204178520241tnc Memory Bit-cell Having Stacked and Folded Non-planar Capacitors
Kepler Computing Inc.
0 cites - 0 cites
- US120290432024Planar and Trench Capacitors with Hydrogen Barrier Dielectric for Logic and Memory Applications and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - US120226622024Planar and Trench Capacitors for Logic and Memory Applications and Methods of Fabrication
Kepler Computing Inc.
0 cites - 0 cites
- US120090182024Transition Metal Dichalcogenide Based Spin Orbit Torque Memory Device
Intel Corporation
0 cites - US120108542024Multi-level Hydrogen Barrier Layers for Memory Applications and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - US119964382024Pocket Flow for Trench Capacitors Integrated with Planar Capacitors on a Same Substrate and Method of Fabrication
Kepler Computing Inc.
0 cites - US1199785320241tnc Memory Bit-cell Having Stacked and Folded Planar Capacitors with Lateral Offset
Kepler Computing Inc.
0 cites - US119858322024Planar and Trench Capacitors with Hydrogen Barrier Dielectric for Logic and Memory Applications
Kepler Computing Inc.
0 cites - US119787622024Planar Capacitors with Non-linear Polar Material Staggered on a Shared Electrode
KEPLER COMPUTING Inc.
0 cites - US119618772024Dual Hydrogen Barrier Layer for Trench Capacitors Integrated with Low Density Film for Logic Structures
KEPLER COMPUTING Inc.
0 cites - US119551532024Multi-element Gain Memory Bit-cell Having Stacked and Folded Planar Memory Elements with and Without Offset
Kepler Computing Inc.
0 cites - US119555122024Dual Hydrogen Barrier Layer for Trench Capacitors Integrated with Low Density Film for Logic Structures and Methods of Fabrication
Kepler Computing Inc.
0 cites - 0 cites
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- US119087042024Method of Fabricating a Perovskite-material Based Planar Capacitor Using Rapid Thermal Annealing (RTA) Methodologies
KEPLER COMPUTING Inc.
0 cites - 0 cites
- US119106182024Multi-element Ferroelectric Gain Memory Bit-cell Having Stacked and Folded Non-planar Capacitors
KEPLER COMPUTING Inc.
0 cites - US119032192024Multi-element Ferroelectric Gain Memory Bit-cell Having Stacked and Folded Planar Capacitors
KEPLER COMPUTING Inc.
0 cites - US118944172024Method of Fabricating a Perovskite-material Based Trench Capacitor Using Rapid Thermal Annealing (RTA) Methodologies
KEPLER COMPUTING Inc.
0 cites - US118698432024Integrated Trench and via Electrode for Memory Device Applications and Methods of Fabrication
KEPLER COMPUTING Inc.
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- US118625172024Integrated Trench and via Electrode for Memory Device Applications
KEPLER COMPUTING Inc.
0 cites - US118545932023Ferroelectric Memory Device Integrated with a Transition Electrode
KEPLER COMPUTING Inc.
0 cites - US118442032023Conductive and Insulative Hydrogen Barrier Layer for Memory Devices
KEPLER COMPUTING Inc.
0 cites - US118442252023Dual Hydrogen Barrier Layer for Memory Devices Integrated with Low Density Film for Logic Structures and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - US118372682023Multi-element Ferroelectric Gain Memory Bit-cell Having Stacked and Folded Planar Capacitors with Lateral Offset
KEPLER COMPUTING Inc.
0 cites - US118390702023High Density Dual Encapsulation Materials for Capacitors and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - US118390882023Integrated via and Bridge Electrodes for Memory Array Applications and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - US118189632023Nano-rod Spin Orbit Coupling Based Magnetic Random Access Memory with Shape Induced Perpendicular Magnetic Anisotropy
Intel Corporation
0 cites - US118106082023Manganese or Scandium Doped Multi-element Non-linear Polar Material Gain Memory Bit-cell
KEPLER COMPUTING Inc.
0 cites - US118007222023Common Mode Compensation for Non-linear Polar Material Based Differential Memory Bit-cell Having One Transistor and Multiple Capacitors
KEPLER COMPUTING Inc.
0 cites - US117929972023Common Mode Compensation for Differential Multi-element Non-linear Polar Material Based Gain Memory Bit-cell
KEPLER COMPUTING Inc.
0 cites - US117929982023Process Integration Flow for Embedded Memory with Multi-pocket Masks for Decoupling Processing of Memory Areas from Non-memory Areas
KEPLER COMPUTING Inc.
0 cites - US117857822023Embedded Memory with Encapsulation Layer Adjacent to a Memory Stack
KEPLER COMPUTING Inc.
0 cites - US117697902023Rapid Thermal Annealing (RTA) Methodologies for Integration of Perovskite-material Based Trench Capacitors
KEPLER COMPUTING Inc.
0 cites - US117709362023Stack of Planar Capacitors Including Capacitors with Non-linear Polar Material and Linear Dielectric for Common Mode Compensation in a Memory Bit-cell
KEPLER COMPUTING Inc.
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- US117659092023Process Integration Flow for Embedded Memory Enabled by Decoupling Processing of a Memory Area from a Non-memory Area
KEPLER COMPUTING Inc.
0 cites - US117587082023Stack of Non-planar Capacitors Including Capacitors with Non-linear Polar Material and Linear Dielectric for Common Mode Compensation in a Memory Bit-cell
Kepler Computing Inc.
0 cites - US117514032023Common Mode Compensation for 2T1C Non-linear Polar Material Based Memory Bit-cell
Kepler Computing Inc.
0 cites - US117414282023Iterative Monetization of Process Development of Non-linear Polar Material and Devices
Kepler Computing Inc.
0 cites - US117299912023Common Mode Compensation for Non-linear Polar Material Based Differential Memory Bit-cell
Kepler Computing Inc.
0 cites - US117299952023Common Mode Compensation for Non-linear Polar Material 1tnc Memory Bit-cell
Kepler Computing Inc.
0 cites - US116964502023Common Mode Compensation for Multi-element Non-linear Polar Material Based Gain Memory Bit-cell
Kepler Computing Inc.
0 cites - US116964512023Common Mode Compensation for Non-linear Polar Material Based 1T1C Memory Bit-cell
Kepler Computing Inc.
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- US116839392023Spin Orbit Memory Devices with Dual Electrodes, and Methods of Fabrication
INTEL CORPORATION
0 cites - US116659752023Spin Orbit Coupling Memory Device with Top Spin Orbit Coupling Electrode and Selector
Intel Corporation
0 cites - US116463562023Piezo-resistive Transistor Based Resonator with Anti-ferroelectric Gate Dielectric
Intel Corporation
0 cites - US116463742023Ferroelectric Transistors to Store Multiple States of Resistances for Memory Cells
Intel Corporation
0 cites - 0 cites
- US116371912023Piezo-resistive Transistor Based Resonator with Ferroelectric Gate Dielectric
Intel Corporation
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- US116054112023Method of Forming Stacked Ferroelectric Planar Capacitors in a Memory Bit-cell
Kepler Computing Inc.
0 cites - 0 cites
- US115942702023Perpendicular Spin Injection via Spatial Modulation of Spin Orbit Coupling
Intel Corporation
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- US115750832023Insertion Layer Between Spin Hall Effect or Spin Orbit Torque Electrode and Free Magnet for Improved Magnetic Memory
Intel Corporation
0 cites - US115576292023Spin Orbit Memory Devices with Reduced Magnetic Moment and Methods of Fabrication
Intel Corporation
0 cites - US115577172023Transition Metal Dichalcogenide Based Spin Orbit Torque Memory Device with Magnetic Insulator
Intel Corporation
0 cites - US115452042023Non-linear Polar Material Based Memory Bit-cell with Multi-level Storage by Applying Different Voltage Levels
Kepler Computing Inc.
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