Patents/Inventors

Takeshi Ishiguro

FukushimaJP6 patents

5 Patents

US125987822026
Super-junction MOSFET/IGBT with MEMS Layer Transfer and WBG Drain
Icemos Technology Limited
0 cites
US125060062025
Semiconductor Device and Method of Direct Wafer Bonding Between Semiconductor Layer Containing Similar WBG Materials
Icemos Technology Limited
0 cites
US122306742025
Radiation Hardened High Voltage Superjunction MOSFET
Icemos Technology Limited
0 cites
US119358392024
Semiconductor Device with Oxide-nitride Stack
Icemos Technology Corporation
0 cites
US117570012023
Radiation Hardened High Voltage Superjunction MOSFET
Icemos Technology Limited
0 cites