16 Patents
- US125955882026Method for Manufacturing Nitride Semiconductor Substrate, Nitride Semiconductor Substrate, and Laminate Structure
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - 0 cites
- US124462812025Nitride Semiconductor Substrate Manufacturing Method, and Laminated Structure
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - US124354412025Method for Manufacturing Nitride Semiconductor Substrate, Nitride Semiconductor Substrate, and Laminate Structure
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - US123993642025Wearable Device, Control Device, System, Control Method, and Non-transitory Computer Readable Medium
Canon Kabushiki Kaisha
0 cites - US121741322024Nitride Semiconductor Substrate, Laminated Structure, and Method for Manufacturing Nitride Semiconductor Substrate
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - US120917742024Nitride Semiconductor Substrate, Laminated Structure, and Method for Manufacturing Nitride Semiconductor Substrate
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - US120717072024Method for Manufacturing Nitride Semiconductor Substrate, Nitride Semiconductor Substrate, and Laminate Structure
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - US120321632024Wearable Device, Control Device, System, Control Method, and Non- Transitory Computer Readable Medium
Canon Kabushiki Kaisha
0 cites - US119707842024Nitride Semiconductor Substrate, Method for Manufacturing Nitride Semiconductor Substrate, and Laminated Structure
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - US119676172024Nitride Semiconductor Substrate, Laminate, Substrate Selection Program, Substrate Data Output Program, Off-angle Coordinate Map, and Methods Thereof
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - US119086882024Method for Manufacturing Nitride Semiconductor Substrate, Nitride Semiconductor Substrate and Layered Structure
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - US118735782024Method for Manufacturing Nitride Semiconductor Substrate and Nitride Semiconductor Substrate
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - US117189272023Group III Nitride Crystal Substrate Having a Diameter of 4 Inches or More and a Curved C-plane with a Radius of Curvature of 15 M or More
SUMITOMO CHEMICAL COMPANY, LIMITED
0 cites - US117063962023Image Processing Apparatus That Performs Processing Concerning Display of Stereoscopic Image, Image Processing Method, and Storage Medium
CANON KABUSHIKI KAISHA
0 cites - US116409062023Crystal Laminate, Semiconductor Device and Method for Manufacturing the Same
HOSEI UNIVERSITY
0 cites