Patents/Inventors

Takaya Miyase

OsakaJP7 patents

7 Patents

US125751522026
Silicon Carbide Epitaxial Substrate and Silicon Carbide Semiconductor Device
Sumitomo Electric Industries, Ltd.
0 cites
US124287522025
Silicon Carbide Epitaxial Substrate
Sumitomo Electric Industries, Ltd.
0 cites
US121763992024
Method of Manufacturing a Silicon Carbide Epitaxial Substrate
SUMITOMO ELECTRIC INDUSTRIES, Ltd.
0 cites
US121258812024
Silicon Carbide Epitaxial Substrate and Silicon Carbide Semiconductor Device
Sumitomo Electric Industries, Ltd.
0 cites
US120209242024
Silicon Carbide Epitaxial Substrate and Method of Manufacturing Silicon Carbide Semiconductor Device
Sumitomo Electric Industries, Ltd.
0 cites
US120209272024
Method for Manufacturing Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Sumitomo Electric Industries, Ltd.
0 cites
US117354152023
Method for Manufacturing Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Sumitomo Electric Industries, Ltd.
0 cites