Patents/Inventors

Takashi Ando

Eastchester, NYUS104 patents

102 Patents

US126222612026
Flexible Trackplan for Power Delivery
International Business Machines Corporation
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US126158122026
Stacked Field-effect Transistors
International Business Machines Corporation
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US125754022026
Non-planar Metal-insulator-metal Structure
International Business Machines Corporation
0 cites
US125751102026
Localized Anneal of Ferroelectric Dielectric
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125687762026
Multifilament Resistive Memory with Insulation Layers
International Business Machines Corporation
0 cites
US125637862026
Single Work Function Metal and Multiple Threshold Voltage Scheme
International Business Machines Corporation
0 cites
US125572952026
Embedded Reram with Backside Contact
International Business Machines Corporation
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US125506322026
Resistive Memory with Resistance Spreading Layer
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US125074652025
Dielectric Tuning of Negative Capacitance in Dual Channel Field Effect Transistors
International Business Machines Corporation
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US124842352025
Solid-state Switch
International Business Machines Corporation
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US124647962025
Gate Induced Drain Leakage Reduction in Finfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US124649602025
Metal Hard Mask Integration for Active Device Structures
International Business Machines Corporation
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US124532932025
Redundant Bottom Pad and Sacrificial via Contact for Process Induced RRAM Forming
International Business Machines Corporation
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US124464802025
Top Contact on Resistive Random Access Memory
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US124085642025
Process-induced Forming of Oxide RRAM
International Business Machines Corporation
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US124083692025
Vertical Transport Field Effect Transistors Having Different Threshold Voltages Along the Channel
International Business Machines Corporation
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US124084312025
Gate Stack Quality for Gate-all-around Field-effect Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US124023422025
Nanosheet Device with T-shaped Dual Inner Spacer
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US123963762025
Piezoelectric Memory
International Business Machines Corporation
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US123826212025
Decoupling Capacitor Inside Gate Cut Trench
International Business Machines Corporation
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US123641742025
Global Heater for Phase Change Memory
International Business Machines Corporation
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US123100342025
Semiconductor Device Identification Using Preformed Resistive Memory
International Business Machines Corporation
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US122849222025
Stacked Access Device and Resistive Memory
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US122726572025
RRAM Filament Location for Physically Unclonable Function
International Business Machines Corporation
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US122663932025
Negative Capacitance for Ferroelectric Capacitive Memory Cell
International Business Machines Corporation
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US122551062025
Multi-vt Nanosheet Devices
INTERATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122343232025
Transparent Polyimide Film and Production Method Therefor
Kaneka Corporation
0 cites
US122258332025
Oxide-based Resistive Memory Having a Plasma-exposed Bottom Electrode
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122258352025
Resistive Switching Device Having a Protective Electrode Ring
International Business Machines Corporation
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US122075732025
Phase Change Memory Cell with Superlattice Based Thermal Barrier
International Business Machines Corporation
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US121913522025
Using Different Work-functions to Reduce Gate-induced Drain Leakage Current in Stacked Nanosheet Transistors
International Business Machines Corporation
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US121563952024
Metal Gate Patterning for Logic and SRAM in Nanosheet Devices
International Business Machines Corporation
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US121503922024
Transfer Length Phase Change Material (PCM) Based Bridge Cell
International Business Machines Corporation
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US121366712024
Gate-all-around Field-effect Transistor Having Source Side Lateral End Portion Smaller Than a Thickness of Channel Portion and Drain Side Lateral End Portion
International Business Machines Corporation
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US121354972024
Random Weight Initialization of Non-volatile Memory Array
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US120996162024
Physically Unclonable Function Based on a Phase Change Material Array
International Business Machines Corporation
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US120589432024
Phase-change Material-based XOR Logic Gates
International Business Machines Corporation
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US120573872024
Decoupling Capacitor Inside Gate Cut Trench
International Business Machines Corporation
0 cites
US120266052024
Fefet Unit Cells for Neuromorphic Computing
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US120044362024
RRAM with High Work Function Cap
International Business Machines Corporation
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US119904702024
Ferroelectric and Paraelectric Stack Capacitors
International Business Machines Corporation
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US119731412024
Nanosheet Transistor with Ferroelectric Region
International Business Machines Corporation
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US119654992024
Motor and Air Compressor
Max Co., Ltd.
0 cites
US119569752024
BEOL Fat Wire Level Ground Rule Compatible Embedded Artificial Intelligence Integration
International Business Machines Corporation
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US119486182024
Non-volatile Analog Resistive Memory Cells Implementing Ferroelectric Select Transistors
International Business Machines Corporation
0 cites
USD10207422024
Memory Card Reader for Programmable Controller
Mitsubishi Electric Corporation
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US119423882024
Temperature-assisted Device with Integrated Thin-film Heater
International Business Machines Corporation
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US119375222024
Confining Filament at Pillar Center for Memory Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US119294042024
Transistor Gates Having Embedded Metal-insulator-metal Capacitors
International Business Machines Corporation
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US119234582024
Fefet with Double Gate Structure
International Business Machines Corporation
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US119160142024
Gate Contact Inside Gate Cut Trench
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US119157342024
Spin-orbit-torque Magnetoresistive Random-access Memory with Integrated Diode
International Business Machines Corporation
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US119157512024
Nonvolatile Phase Change Material Logic Device
International Business Machines Corporation
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US119159262024
Percolation Doping of Inorganic-organic Frameworks for Multiple Device Applications
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US119160992024
Multilayer Dielectric for Metal-insulator-metal Capacitor
International Business Machines Corporation
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US119107342024
Phase Change Memory Cell with Ovonic Threshold Switch
International Business Machines Corporation
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US119010022024
RRAM Filament Spatial Localization Using a Laser Stimulation
International Business Machines Corporation
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US118644742024
Reram Analog PUF Using Filament Location
International Business Machines Corporation
0 cites
US118567982023
Resistive Random-access Memory Random Number Generator
International Business Machines Corporation
0 cites
US118551802023
Gate Induced Drain Leakage Reduction in Finfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118551482023
Vertical Field Effect Transistor with Dual Threshold Voltage
International Business Machines Corporation
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US118442902023
Plasma Co-doping to Reduce the Forming Voltage in Resistive Random Access Memory (reram) Devices
International Business Machines Corporation
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US118442932023
Physical Unclonable Function Device with Phase Change
International Business Machines Corporation
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US118308772023
Co-integrated Channel and Gate Formation Scheme for Nanosheet Transistors Having Separately Tuned Threshold Voltages
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US118188862023
Low Program Voltage Flash Memory Cells with Embedded Heater in the Control Gate
International Business Machines Corporation
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US118057142023
Phase Change Memory with Conductive Bridge Filament
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US118057132023
Drift Mitigation for Resistive Memory Devices
International Business Machines Corporation
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US118006982023
Semiconductor Structure with Embedded Capacitor
International Business Machines Corporation
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US117902432023
Ferroelectric Field Effect Transistor for Implementation of Decision Tree
International Business Machines Corporation
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US117840962023
Vertical Transport Field-effect Transistors Having Germanium Channel Surfaces
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US117709862023
Etch-resistant Doped Scavenging Carbide Electrodes
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US117569962023
Formation of Wrap-around-contact for Gate-all-around Nanosheet FET
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US117569602023
Multi-threshold Voltage Gate-all-around Transistors
International Business Machines Corporation
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US117485242023
Tamper Resistant Obfuscation Circuit
International Business Machines Corporation
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US117424252023
Finfet Device with Partial Interface Dipole Formation for Reduction of Gate Induced Drain Leakage
International Business Machines Corporation
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US117372892023
High Density Reram Integration with Interconnect
International Business Machines Corporation
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US117356282023
Nanosheet Metal-oxide Semiconductor Field Effect Transistor with Asymmetric Threshold Voltage
International Business Machines Corporation
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US117300702023
Resistive Random-access Memory Device with Step Height Difference
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117279772023
Non-volatile Analog Resistive Memory Cells Implementing Ferroelectric Select Transistors
International Business Machines Corporation
0 cites
US117070022023
CBRAM with Controlled Bridge Location
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US117007782023
Method for Controlling the Forming Voltage in Resistive Random Access Memory Devices
Tokyo Electron Limited
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US116884572023
Using Ferroelectric Field-effect Transistors (fefets) as Capacitive Processing Units for In-memory Computing
International Business Machines Corporation
0 cites
US116839412023
Resistive Random Access Memory Integrated with Vertical Transport Field Effect Transistors
International Business Machines Corporation
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US116659832023
Phase Change Memory Cell with Ovonic Threshold Switch
International Business Machines Corporation
0 cites
US116535782023
Phase-change Material-based XOR Logic Gates
International Business Machines Corporation
0 cites
US116476802023
Oxide-based Resistive Memory Having a Plasma-exposed Bottom Electrode
International Business Machines Corporation
0 cites
US116476842023
Nonvolatile Tunable Capacitive Processing Unit
International Business Machines Corporation
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US116476392023
Conductive Bridging Random Access Memory Formed Using Selective Barrier Metal Removal
International Business Machines Corporation
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US116463622023
Vertical Transport Field-effect Transistor Structure Having Increased Effective Width and Self-aligned Anchor for Source/drain Region Formation
International Business Machines Corporation
0 cites
US116314622023
Temperature Assisted Programming of Flash Memory for Neuromorphic Computing
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116318092023
In-memory Resistive Random Access Memory XOR Logic Using Complimentary Switching
International Business Machines Corporation
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US116109412023
Integrated Non Volatile Memory Electrode Thin Film Resistor Cap and Etch Stop
International Business Machines Corporation
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US116056732023
Dual Resistive Random-access Memory with Two Transistors
International Business Machines Corporation
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US115945962023
Back-end-of-line Compatible Metal-insulator-metal On-chip Decoupling Capacitor
International Business Machines Corporation
0 cites
US115905572023
Wire Forming Apparatus
KABUSHIKI KAISHA ITAYA SEISAKU SHO
0 cites
US115868992023
Neuromorphic Device with Oxygen Scavenging Gate
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115881052023
Phase-change Memory Device with Reduced Programming Voltage
International Business Machines Corporation
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US115878902023
Tamper-resistant Circuit, Back-end of the Line Memory and Physical Unclonable Function for Supply Chain Protection
International Business Machines Corporation
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US115878372023
Oxygen Vacancy Passivation in High-k Dielectrics for Vertical Transport Field Effect Transistor
International Business Machines Corporation
0 cites
US115724372023
Thermoplastic Resin, Thermoplastic Resin Composition, and Heat Conductive Sheet
KANEKA CORPORATION
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US115630822023
Reduction of Drain Leakage in Nanosheet Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115577242023
Resistive Memory with Embedded Metal Oxide Fin for Gradual Switching
INTERNATIONAL BUSINESS MACHINES CORPORATION
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