Patents/Inventors

Takahiro Nakatani

TokyoJP6 patents

6 Patents

US125934622026
IGBT and Diode with Lifetime Control Regions
Mitsubishi Electric Corporation
0 cites
US125016352025
Semiconductor Device
Mitsubishi Electric Corporation
0 cites
US123289332025
Semiconductor Device
Mitsubishi Electric Corporation
0 cites
US120028062024
Reverse Conducting Semiconductor Device and Method for Manufacturing Reverse Conducting Semiconductor Device
Mitsubishi Electric Corporation
0 cites
US119089542024
Semiconductor Device with Insulated Gate Bipolar Transistor Region and Diode Region Provided on Semiconductor Substrate and Adjacent to Each Other
Mitsubishi Electric Corporation
0 cites
US115692252023
Semiconductor Device
Mitsubishi Electric Corporation
0 cites