4 Patents
- US122438202025Semiconductor Device with Fine Metal Lines for BEOL Structure and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122180542025Method of Forming an Integrated Circuit Device Having an Etch-stop Layer Between Metal Wires
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US119904092024Semiconductor Device with Fine Metal Lines for BEOL Structure and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites