Tae Mochizuki

6 Patents

• US123519432025

  N-type Gan Crystal, Gan Wafer, and Gan Crystal, Gan Wafer and Nitride Semiconductor Device Production Method

  MITSUBISHI CHEMICAL CORPORATION

  0 cites
• US121071292024

  Self-standing Gan Substrate, Gan Crystal, Method for Producing Gan Single Crystal, and Method for Producing Semiconductor Device

  Mitsubishi Chemical Corporation

  0 cites
• US119879032024

  N-type Gan Crystal, Gan Wafer, and Gan Crystal, Gan Wafer and Nitride Semiconductor Device Production Method

  MITSUBISHI CHEMICAL CORPORATION

  0 cites
• US118107822023

  Conductive C-plane Gan Substrate

  MITSUBISHI CHEMICAL CORPORATION

  0 cites
• US116644282023

  Self-standing Gan Substrate, Gan Crystal, Method for Producing Gan Single Crystal, and Method for Producing Semiconductor Device

  Mitsubishi Chemical Corporation

  0 cites
• US115917152023

  Gan Single Crystal and Method for Manufacturing Gan Single Crystal

  MITSUBISHI CHEMICAL CORPORATION

  0 cites