29 Patents
- US125818732026Method of Manufacturing Sic Semiconductor Device and Sic Semiconductor Device
TOYOTA TSUSHO CORPORATION
0 cites - US125716262026Method for Measuring Etching Amount, and Measurement System Therefor
TOYOTA TSUSHO CORPORATION
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- US125404162026Method for Manufacturing a Semiconductor Substrate and Method for Suppressing Occurrence of Cracks in a Growth Layer
TOYOTA TSUSHO CORPORATION
0 cites - US125348252026Sic Epitaxial Substrate Manufacturing Method and Manufacturing Device Therefor
TOYOTA TSUSHO CORPORATION
0 cites - US125097952025Method for Manufacturing Aluminum Nitride Substrate, Aluminum Nitride Substrate, and Method for Forming Aluminum Nitride Layer
TOYOTA TSUSHO CORPORATION
0 cites - US124603152025Method for Manufacturing Semiconductor Substrates and Method for Suppressing Introduction of Displacement to Growth Layer
TOYOTA TSUSHO CORPORATION
0 cites - US124513482025Method and Device for Manufacturing Sic Substrate, and Method for Reducing Macro-step Bunching of Sic Substrate
TOYOTA TSUSHO CORPORATION
0 cites - US124216242025Sic Substrate, Sic Epitaxial Substrate, Sic Ingot and Production Methods Thereof
TOYOTA TSUSHO CORPORATION
0 cites - US123851582025Method for Manufacturing a Semiconductor Substrate by Forming a Growth Layer on an Underlying Substrate Having Through Holes
TOYOTA TSUSHO CORPORATION
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- US123259362025Aluminum Nitride Substrate Manufacturing Method, Aluminum Nitride Substrate, and Method of Removing Strain Layer Introduced Into Aluminum Nitride Substrate by Laser Processing
TOYOTA TSUSHO CORPORATION
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- US122550732025Silicon Carbide Substrate Manufacturing Method, Silicon Carbide Substrate, and Method of Removing Strain Layer Introduced Into Silicon Carbide Substrate by Laser Processing
TOYOTA TSUSHO CORPORATION
0 cites - US122473192025Method for Producing a Sic Seed Crystal for Growth of a Sic Ingot by Heat-treating in a Main Container Made of a Sic Material
TOYOTA TSUSHO CORPORATION
0 cites - US122373772025Sic Semiconductor Substrate, And, Production Method Therefor and Production Device Therefor
TOYOTA TSUSHO CORPORATION
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- US122093282025Method of Manufacturing Semiconductor Substrate and Epitaxial Growth Method
TOYOTA TSUSHO CORPORATION
0 cites - US121319602024Temperature Distribution Evaluation Method, Temperature Distribution Evaluation Device, and Soaking Range Evaluation Method
TOYOTA TSUSHO CORPORATION
0 cites - US120984762024Method for Producing a Sic Substrate via an Etching Step, Growth Step, and Peeling Step
TOYOTA TSUSHO CORPORATION
0 cites - US120657582024Method for Manufacturing a Sic Substrate by Simultaneously Forming a Growth Layer on One Surface and Etching Another Surface of a Sic Base Substrate
TOYOTA TSUSHO CORPORATION
0 cites - US120209282024Sic Semiconductor Substrate, Method for Manufacturing Same, and Device for Manufacturing Same
TOYOTA TSUSHO CORPORATION
0 cites - US120149392024Device for Manufacturing Semiconductor Substrate Comprising Temperature Gradient Inversion Means and Method for Manufacturing Semiconductor Substrate
TOYOTA TSUSHO CORPORATION
0 cites - US119729492024Sic Substrate Manufacturing Method and Manufacturing Device, and Method for Reducing Work-affected Layer in Sic Substrate
TOYOTA TSUSHO CORPORATION
0 cites - US119526782024Method for Manufacturing Etched Sic Substrate and Grown Sic Substrate by Material Tranportation and Method for Epitaxial Growth by Material Transportation
TOYOTA TSUSHO CORPORATION
0 cites - US119553542024Semiconductor Substrate Manufacturing Device Applicable to Large-diameter Semiconductor Substrate
TOYOTA TSUSHO CORPORATION
0 cites - US119329672024Sic Single Crystal Manufacturing Method, Sic Single Crystal Manufacturing Device, and Sic Single Crystal Wafer
TOYOTA TSUSHO CORPORATION
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