43 Patents
- US126045192026Semiconductor Structure Having Multiple Nanostructures with Different Widths and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125987642026Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125934892026Semiconductor Structure Including Gate Spacer Layer and Dielectric Layer Having Portion Lower Than Top Surface of Gate Spacer Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125882292026Gate-top Dielectric Structure for Self-aligned Contact
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125817052026Semiconductor Device Including Multiple Stacks of Semiconductor Nanosheets, Multiple Strained Layers, and Dielectric Wall Located Strained Layers and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125751462026Semiconductor Structure, Semiconductor Assembly and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125637982026Semiconductor Device Having Nanosheet Transistor and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125573752026Semiconductor Devices and Methods of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US125385332026Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125074502025Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124647632025Hybrid Nanostructure and Fin Structure Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124245202025Semiconductor Device with Back-side via Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124127772025Reducing Parasitic Capacitance in Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124143542025Semiconductor Strutures with Dielectric Fins
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124143552025Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124084252025Semiconductor Structure with High Integration Density and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US123896452025Semiconductor Structure with Extended Contact Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123362822025Semiconductor Device Having Different Source/drain Junction Depths and Fabrication Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123175672025Semiconductor Device Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123006982025Isolation Structure for Preventing Unintentional Merging of Epitaxially Grown Source/drain
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122666532025Semiconductor Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122058492025Semiconductor Device Structure with Source/drain Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121837352024Semiconductor Devices and Methods of Manufacture
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120806072024Structure and Method for Finfet Device with Source/drain Modulation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120574852024Gate-all-around (GAA) Method and Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120516952024Semiconductor Devices Having Gate Dielectric Layers of Varying Thicknesses and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119963202024Reducing Parasitic Capacitance in Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119905252024Isolation Structure for Isolating Epitaxially Grown Source/drain Regions and Method of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119675322024Gate Spacers and Methods of Forming the Same in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119234132024Semiconductor Structure with Extended Contact Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118044852023Semiconductor Devices and Methods of Manufacture
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117912172023Gate Structure and Method with Dielectric Gates and Gate-cut Features
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117496772023Semiconductor Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117496832023Isolation Structure for Preventing Unintentional Merging of Epitaxially Grown Source/drain
TAIWAN SEMICONDUCTOR MANUFACTURING Co. Ltd.
0 cites - US117423492023Semiconductor Devices Having Gate Dielectric Layers of Varying Thicknesses and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - 0 cites
- 0 cites
- US116580742023Structure and Method for Finfet Device with Source/drain Modulation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115455732023Hybrid Nanostructure and Fin Structure Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites