Szu-yao Chang

6 Patents

• US125934442026

  Method for Manufacturing Memory Device Having Word Line Surrounding Gate Structure

  NANYA TECHNOLOGY CORPORATION

  0 cites
• US125750882026

  Memory Device Having Word Line Surrounding Gate Structure and Manufacturing Method Thereof

  NANYA TECHNOLOGY CORPORATION

  0 cites
• US123638862025

  Semiconductor Device Structure Having a Channel Layer with Different Roughness

  NANYA TECHNOLOGY CORPORATION

  0 cites
• US122197492025

  Method of Manufacturing Semiconductor Device Structure Having a Channel Layer with Different Roughness

  NANYA TECHNOLOGY CORPORATION

  0 cites
• US116417342023

  Method of Forming a Semiconductor Structure Having a Gate Structure Electrically Connected to a Word Line

  NANYA TECHNOLOGY CORPORATION

  0 cites
• US115749112023

  Method for Fabricating Semiconductor Device with Protruding Contact

  NANYA TECHNOLOGY CORPORATION

  0 cites