3 Patents
- US123826912025Effective Work Function Tuning via Silicide Induced Interface Dipole Modulation for Metal Gates
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119905222024Effective Work Function Tuning via Silicide Induced Interface Dipole Modulation for Metal Gates
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117423522023Vertical Semiconductor Device with Steep Subthreshold Slope
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites