19 Patents
- US125674382026Magnetic Heads Having Low Magnetic Coercivity (hc) and High Saturated Magnetic Flux Density (bs) in Ferromagnetic (FM) Layer(s) or Shield(s) with Minimized Saturation
Western Digital Technologies, Inc.
0 cites - US124177822025Multilayer Structures for Magnetic Recording Devices to Facilitate Targeted Magnetic Switching and Low Coercivity
Western Digital Technologies, Inc.
0 cites - US124085602025Buffer Layers and Interlayers That Promote Bisbx (012) Alloy Orientation for Sot and MRAM Devices
Western Digital Technologies, Inc.
0 cites - US122075632025Magnetoresistive Devices Comprising a Synthetic Antiferromagnetic Coupling Layer of Rual Having a (110) Texture
Western Digital Technologies, Inc.
0 cites - US121067842024Read Sensor with Ordered Heusler Alloy Free Layer and Semiconductor Barrier Layer
Western Digital Technologies, Inc.
0 cites - US121067912024Doped Bisb (012) or Undoped Bisb (001) Topological Insulator with Genife Buffer Layer And/or Interlayer for SOT Based Sensor, Memory, and Storage Devices
Western Digital Technologies, Inc.
0 cites - US120944982024Recording Head with a Multilayer Spin Torque Element Having Positive and Negative Beta Materials
Western Digital Technologies, Inc.
0 cites - US120401142024Magnetoresistive Device Comprising a Synthetic Antiferromagnetic Coupling Layer of Rual Having a (001) Texture
Western Digital Technologies, Inc.
0 cites - US120336752024Cobalt-boron (cob) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices
Western Digital Technologies, Inc.
0 cites - US120356342024Tunneling Magnetoresistive (TMR) Device with Improved Seed Layer
Western Digital Technologies, Inc.
0 cites - US119901632024Multilayer Structures for Magnetic Recording Devices to Facilitate Targeted Magnetic Switching and Low Coercivity
Western Digital Technologies, Inc.
0 cites - 0 cites
- US119084962024Bisbx (012) Layers Having Increased Operating Temperatures for SOT and MRAM Devices
Western Digital Technologies, Inc.
0 cites - 0 cites
- US118622052024Spin Torque Oscillator with Multilayer Seed for Improved Performance and Reliability
Western Digital Technologies, Inc.
0 cites - US117639732023Buffer Layers and Interlayers That Promote Bisbx (012) Alloy Orientation for SOT and MRAM Devices
Western Digital Technologies, Inc.
0 cites - US116824202023Seed Layer for Spin Torque Oscillator in Microwave Assisted Magnetic Recording Device
Western Digital Technologies, Inc.
0 cites - US116839932023Material Having Both Negative Spin Polarization and Negative Anisotropy
Western Digital Technologies, Inc.
0 cites - US116578362023Magnetic Recording Devices Having Negative Polarization Layer to Enhance Spin-transfer Torque
Western Digital Technologies, Inc.
0 cites