10 Patents
- US124396272025Gate Structures to Enable Lower Subthreshold Slope in Gallium Nitride-based Transistors
Intel Corporation
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- US122888082025High Aspect Ratio Source or Drain Structures with Abrupt Dopant Profile
Intel Corporation
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- US120274172024Source or Drain Structures with High Germanium Concentration Capping Layer
Intel Corporation
0 cites - 0 cites
- US118045232023High Aspect Ratio Source or Drain Structures with Abrupt Dopant Profile
Intel Corporation
0 cites - 0 cites
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