Sunhye Hwang

3 Patents

• US125936282026

  Silicon Precursor Having a Heterocyclic Group, Composition for Depositing a Silicon-containing Layer Comprising the Same and Method of Depositing a Silicon-containing Layer Using the Same

  Samsung Electronics Co., Ltd.

  0 cites
• US125460012026

  Composition for Depositing a Silicon-containing Layer and Method of Depositing a Silicon-containing Layer Using the Same

  DNF Co., Ltd

  0 cites
• US122870642025

  Gas Container and Deposition System Including the Same

  SK Specialty Co., Ltd.

  0 cites