21 Patents
- 0 cites
- US122074562025Method of Forming an Integrated Circuit Devices Having Buried Word Lines
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US119293242024Semiconductor Devices Having Improved Electrical Characteristics and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118896812024Integrated Circuit Devices Having Buried Word Lines Therein
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- 0 cites
- 0 cites
- US117281672023Method of Forming Patterns, Integrated Circuit Device, and Method of Manufacturing the Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116887792023Semiconductor Memory Device and Method for Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- 0 cites
- US116658832023Semiconductor Memory Device Having Spacer Capping Pattern Disposed Between Burried Dielectic Pattern and an Air Gap and Method of Fabricating Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US116581172023Semiconductor Devices Having Improved Electrical Characteristics and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US116160662023Semiconductor Device and Manufacturing Method of the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116108912023Semiconductor Device Including Storage Node Electrode Including Step and Method of Manufacturing the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US116005702023Semiconductor Memory Device and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US115749152023Semiconductor Device Including Insulating Patterns and Method for Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites