Sung-min Joe

7 Patents

• US124761882025

  Memory Device Including Asymmetric Ground Selection Lines

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US123877912025

  Memory Device with Improved Program Performance and Method of Operating the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US121596752024

  Nonvolatile Memory Device Including a Logic Circuit to Control Word Line Voltages

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US120462872024

  Memory Device with Improved Program Performance and Method of Operating the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US118695942024

  Nonvolatile Memory Device Including a Logic Circuit to Control Word and Bitline Voltages

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US116054322023

  Nonvolatile Memory Device Including a Verify Circuit to Control Word and Bit Line Voltages and Method of Operating the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US116003312023

  Memory Device with Improved Program Performance and Method of Operating the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites