3 Patents
- US122940052025Semiconductor Device Having a Plurality of Channel Layers and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118626392024Semiconductor Device Having a Plurality of Channel Layers and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117055032023Semiconductor Device Including Non-sacrificial Gate Spacers and Method of Fabricating the Same
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
0 cites