7 Patents
- US124263142025Strain Generation and Anchoring in Gate-all-around Field Effect Transistors
International Business Machines Corporation
0 cites - US123639902025Upper and Lower Gate Configurations of Monolithic Stacked Finfet Transistors
International Business Machines Corporation
0 cites - US121488332024Three-dimensional, Monolithically Stacked Field Effect Transistors Formed on the Front and Backside of a Wafer
International Business Machines Corporation
0 cites - US119234342024Self-aligned Bottom Spacer Epi Last Flow for VTFET
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US118175012023Three-dimensional, Monolithically Stacked Field Effect Transistors Formed on the Front and Backside of a Wafer
International Business Machines Corporation
0 cites - US116887412023Gate-all-around Devices with Isolated and Non-isolated Epitaxy Regions for Strain Engineering
International Business Machines Corporation
0 cites - US115575042023Semiconductor Device Including Isolation Layers and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites