6 Patents
- US126158182026Semiconductor Transistor Devices Including Alternatively Stacked Source/drain Regions
Samsung Electronics Co., Ltd.
0 cites - US125573622026Semiconductor Device Including Source/drain Pattern with Varied Germanium Concentrations
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US124713452025Semiconductor Device and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US124531482025Integrated Circuit Device Including Field-effect Transistor with Controlled Sizes and Configurations
Samsung Electronics Co., Ltd.
0 cites - 0 cites