41 Patents
- US125576232026Semiconductor Device with Connecting Structure Having a Doped Layer and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125385442026Method for Manufacturing Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125016472025Semiconductor Device and Method of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124842402025Semiconductor Device and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124329632025Device Having an Air Gap Adjacent to a Contact Plug and Covered by a Doped Dielectric Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124263002025Transistor Source/drain Contacts and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124190992025Method for Manufacturing Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123680182025Method for Ion Implantation Uniformity Control
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123680982025Methods of Forming Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123175512025Semiconductor Devices Including Backside Power Rails and Methods of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US123007402025Metal Layer Protection During Wet Etching
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122781412025Semiconductor Devices and Methods of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US122059942025Sacrificial Layer for Semiconductor Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121991562025Contact Formation with Reduced Dopant Loss and Increased Dimensions
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121836322024Bottom Lateral Expansion of Contact Plugs Through Implantation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121549492024Transistor Contacts and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121129772024Reducing Spacing Between Conductive Features Through Implantation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121070862024Field Effect Transistor Contact with Reduced Contact Resistance
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120681952024Metal Loss Prevention Using Implantation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120150552024Doping for Semiconductor Device with Conductive Feature
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120093052024Semiconductor Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119844912024Metal Layer Protection During Wet Etching
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119730272024Semiconductor Device and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US119087402024Semiconductor Structure with Doped via Plug
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119014552024Method of Manufacturing a Finfet by Implanting a Dielectric with a Dopant
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- 0 cites
- US118483612023Sacrificial Layer for Semiconductor Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117912042023Semiconductor Device with Connecting Structure Having a Doped Layer and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US117423862023Doping for Semiconductor Device with Conductive Feature
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117106592023Metal Loss Prevention Using Implantation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116950422023Transistor Contacts and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116520532023Semiconductor Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116463772023Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116159822023Reducing Spacing Between Conductive Features Through Implantation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites