Patents/Inventors

Su Chen Fan

Cohoes, NYUS36 patents

36 Patents

US126158122026
Stacked Field-effect Transistors
International Business Machines Corporation
0 cites
US126158322026
Self-aligned Backside Contact Structure for Semiconductor Device Power Delivery
International Business Machines Corporation
0 cites
US125936682026
Shallow and Deep Contacts with Stitching
International Business Machines Corporation
0 cites
US125817022026
Common Self Aligned Gate Contact for Stacked Transistor Structures
International Business Machines Corporation
0 cites
US125504202026
Top Contact Structures for Stacked Transistors
International Business Machines Corporation
0 cites
US125503852026
Contact Resistance of Nanosheet Transistor
International Business Machines Corporation
0 cites
US125435542026
Stacked Field Effect Transistor Contacts
International Business Machines Corporation
0 cites
US124648132025
Semiconductor Device Having Hybrid Middle of Line Contacts
International Business Machines Corporation
0 cites
US124648092025
Vertical Field Effect Transistor with Minimal Contact to Gate Erosion
International Business Machines Corporation
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US124463062025
Stacked Field Effect Transistor Structure with Independent Gate Control Between Top and Bottom Gates
International Business Machines Corporation
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US124463202025
Bottom Contact with Self-aligned Spacer for Stacked Semiconductor Devices
International Business Machines Corporation
0 cites
US124190792025
Field Effect Transistor with Backside Source/drain
International Business Machines Corporation
0 cites
US124128292025
Method and Structure of Forming Sidewall Contact for Stacked FET
0 cites
US123746152025
Electronic Devices with a Low Dielectric Constant
International Business Machines Corporation
0 cites
US123242362025
Bottom Contact for Stacked GAA FET
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123101022025
Stacked Vertical Transport Field-effect Transistor Logic Gate Structures with Shared Epitaxial Layers
International Business Machines Corporation
0 cites
US123100902025
CMOS Top Source/drain Region Doping and Epitaxial Growth for a Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US123100722025
Middle of Line Structure with Stacked Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122680262025
High Aspect Ratio Contact Structure with Multiple Metal Stacks
International Business Machines Corporation
0 cites
US122437702025
Hard Mask Removal Without Damaging Top Epitaxial Layer
International Business Machines Corporation
0 cites
US122373252025
Three-dimensional Field Effect Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US121913882025
Area Scaling for VTFET Contacts
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US121130132024
Dual Color via Patterning
International Business Machines Corporation
0 cites
US121071472024
Self-aligned Gate Contact for Vtfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US119359292024
High Aspect Ratio Shared Contacts
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119089232024
Low-resistance Top Contact on VTFET
International Business Machines Corporation
0 cites
US119014402024
Sacrificial Fin for Self-aligned Contact Rail Formation
International Business Machines Corporation
0 cites
US118175022023
Three-dimensional Field Effect Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118109182023
Stacked Vertical Transport Field-effect Transistor Logic Gate Structures with Shared Epitaxial Layers
International Business Machines Corporation
0 cites
US118108282023
Transistor Boundary Protection Using Reversible Crosslinking Reflow
International Business Machines Corporation
0 cites
US117423542023
Top Epitaxial Layer and Contact for VTFET
International Business Machines Corporation
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US116949582023
Layout Design for Threshold Voltage Tuning
International Business Machines Corporation
0 cites
US116463582023
Sacrificial Fin for Contact Self-alignment
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116211992023
Silicide Formation for Source/drain Contact in a Vertical Transport Field-effect Transistor
International Business Machines Corporation
0 cites
US116159902023
CMOS Top Source/drain Region Doping and Epitaxial Growth for a Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US116057172023
Wrapped-around Contact for Vertical Field Effect Transistor Top Source-drain
International Business Machines Corporation
0 cites