48 Patents
- US126106052026IC Structure with Gate Electrode Fully Within V-shaped Cavity
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US125385012026Structure Providing Poly-resistor Under Shallow Trench Isolation and Above High Resistivity Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - 0 cites
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- US123362852025Field Effect Transistor with Shallow Trench Isolation Features Within Source/drain Regions
GLOBALFOUNDRIES U.S. Inc.
0 cites - US123242272025Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites - US123064422025Structure Including Grating Coupler with Optofluidic Grating Channels
Globalfoundries U.S. Inc.
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- US122439232025Contact-over-active-gate Transistor Structures with Contacts Landed on Enlarged Gate Portions
Globalfoundries U.S. Inc.
0 cites - US122306732025Field-effect Transistors Having a Gate Electrode Positioned Inside a Substrate Recess
Globalfoundries U.S. Inc.
0 cites - US121703132024Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites - 0 cites
- US121193522024IC Structure Including Porous Semiconductor Layer in Bulk Substrate Adjacent Trench Isolation
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US120275822024IC Structure Including Porous Semiconductor Layer Under Trench Isolation
GLOBALFOUNDRIES U.S. Inc.
0 cites - US120280532024Structure Including Resistor Network for Back Biasing FET Stack
Globalfoundries U.S. Inc.
0 cites - 0 cites
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- US118625112024Field-effect Transistors with a Crystalline Body Embedded in a Trench Isolation Region
Globalfoundries U.S. Inc.
0 cites - US118481922023Heterojunction Bipolar Transistor with Emitter Base Junction Oxide Interface
GLOBALFOUNDRIES U.S. Inc.
0 cites - 0 cites
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- US118174792023Transistor with Air Gap Under Raised Source/drain Region in Bulk Semiconductor Substrate
Globalfoundries U.S. Inc.
0 cites - US118030092023Photonics Structures Having a Locally-thickened Dielectric Layer
Globalfoundries U.S. Inc.
0 cites - US117913342023Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites - 0 cites
- US117642252023Field Effect Transistor with Shallow Trench Isolation Features Within Source/drain Regions
GLOBALFOUNDRIES U.S. Inc.
0 cites - US117495592023Bulk Substrates with a Self-aligned Buried Polycrystalline Layer
Globalfoundries U.S. Inc.
0 cites - 0 cites
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- US117217192023Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites - US116770002023IC Structure Including Porous Semiconductor Layer Under Trench Isolations Adjacent Source/drain Regions
Globalfoundries U.S. Inc.
0 cites - US116644122023Structure Providing Poly-resistor Under Shallow Trench Isolation and Above High Resistivity Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - US116644702023Photodiode with Integrated, Self-aligned Light Focusing Element
GLOBALFOUNDRIES U.S. Inc.
0 cites - 0 cites
- US116398952023Device Including Optofluidic Sensor with Integrated Photodiode
GLOBALFOUNDRIES U.S. Inc.
0 cites - 0 cites
- US116371732023Structure Including Polycrystalline Resistor with Dopant-including Polycrystalline Region Thereunder
Globalfoundries U.S. Inc.
0 cites - US116057102023Transistor with Air Gap Under Source/drain Region in Bulk Semiconductor Substrate
Globalfoundries U.S. Inc.
0 cites - US115748632023Local Interconnect Layer with Device Within Second Dielectric Material, and Related Methods
Globalfoundries U.S. Inc.
0 cites - 0 cites
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- US115455492023Semiconductor Structures with Body Contact Regions Embedded in Polycrystalline Semiconductor Material
Globalfoundries U.S. Inc.
0 cites - US115455772023Semiconductor Structure with In-device High Resistivity Polycrystalline Semiconductor Element and Method
Globalfoundries U.S. Inc.
0 cites