5 Patents
- US124354402025Methods for Producing a Single Crystal Silicon Ingot Using Boric Acid as a Dopant
Globalwafers Co., Ltd.
0 cites - 0 cites
- US119763792024Crystal Pulling Systems Having Fluid-filled Exhaust Tubes That Extend Through the Housing
Globalwafers Co., Ltd.
0 cites - US117955712023Production and Use of Dynamic State Charts When Growing a Single Crystal Silicon Ingot
Globalwafers Co., Ltd.
0 cites - US115850102023Methods for Producing a Single Crystal Silicon Ingot Using Boric Acid as a Dopant and Ingot Puller Apparatus That Use a Solid-phase Dopant
Globalwafers Co., Ltd.
0 cites