29 Patents
- US125882172026Programming Current Control for Artificial Intelligence (AI) Devices
International Business Machines Corporation
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- US124532932025Redundant Bottom Pad and Sacrificial via Contact for Process Induced RRAM Forming
International Business Machines Corporation
0 cites - US124464802025Top Contact on Resistive Random Access Memory
INTERNATIONAL BUSINESS MACHINES CORPORATION
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- US123290452025Phase Change Memory Programming Current Leakage Reduction
International Business Machines Corporation
0 cites - US123175142025Resistive Random-access Memory Structures with Stacked Transistors
International Business Machines Corporation
0 cites - US123177642025Uniform Voltage Drop in Arrays of Memory Devices
International Business Machines Corporation
0 cites - US123100342025Semiconductor Device Identification Using Preformed Resistive Memory
International Business Machines Corporation
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- US122373682025Semiconductor Structures Including Middle-of-line (MOL) Capacitance Reduction for Self-aligned Contact in Gate Stack
Adeia Semiconductor Solutions LLC
0 cites - US122258332025Oxide-based Resistive Memory Having a Plasma-exposed Bottom Electrode
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US121838262024Vertical Field Effect Transistor with Low-resistance Bottom Source-drain Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US121442702024Back End of Line Embedded RRAM Structure with Grain Growth Enhancement
International Business Machines Corporation
0 cites - US121442712024Back End of Line Embedded RRAM Structure with Low Forming Voltage
International Business Machines Corporation
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- US121070082024Maskless Alignment Scheme for BEOL Memory Array Manufacturing
International Business Machines Corporation
0 cites - US120044352024Tunable Resistive Random Access Memory Cell
International Business Machines Corporation
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- US119569752024BEOL Fat Wire Level Ground Rule Compatible Embedded Artificial Intelligence Integration
International Business Machines Corporation
0 cites - US119570692024Contact Resistance of a Metal Liner in a Phase Change Memory Cell
International Business Machines Corporation
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- US116597802023Phase Change Memory Structure with Efficient Heating System
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116476802023Oxide-based Resistive Memory Having a Plasma-exposed Bottom Electrode
International Business Machines Corporation
0 cites - 0 cites
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