13 Patents
- US125503832026Double Gate Ferroelectric Field Effect Transistor Devices and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US124531372025Ferroelectric Memory Devices Having Improved Ferroelectric Properties and Methods of Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US1236390620253D Lateral Patterning via Selective Deposition for Ferroelectric Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123241612025Annealed Seed Layer to Improve Ferroelectric Properties of Memory Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122898902025Method of Fabricating Transistor Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121503092024Double Gate Metal-ferroelectric-metal-insulator-semiconductor Field-effect Transistor (MFMIS-FET) Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120949352024Method of Selective Film Deposition and Semiconductor Feature Made by the Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119178312024Annealed Seed Layer to Improve Ferroelectric Properties of Memory Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119089362024Double Gate Ferroelectric Field Effect Transistor Devices and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US118174982023Ferroelectric Field Effect Transistor Devices and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US118109562023In-situ Thermal Annealing of Electrode to Form Seed Layer for Improving Feram Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116902282023Annealed Seed Layer to Improve Ferroelectric Properties of Memory Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116521482023Method of Selective Film Deposition and Semiconductor Feature Made by the Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites