3 Patents
- US126047192026Semiconductor Device Having a Through-via Structure Electrically Connected to a Contact Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121660002024Semiconductor Device Including a Lower Chip Including a Peripheral Circuit and First and Second Memory Chips Vertically Stacked Thereon and Data Storage System Including the Same
Samsung Electronics Co., Ltd.
0 cites - US119554082024Integrated Circuit Semiconductor Device Including Through Silicon Via
Samsung Electronics Co., Ltd.
0 cites