53 Patents
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- US125385012026Structure Providing Poly-resistor Under Shallow Trench Isolation and Above High Resistivity Polysilicon Layer
Globalfoundries U.S. Inc.
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- US124190982025Device Integration Schemes Leveraging a Bulk Semiconductor Substrate Having a <111> Crystal Orientation
Globalfoundries U.S. Inc.
0 cites - US124111052025Semiconductor Structure with Frontside Port and Cavity Features for Conveying Sample to Sensing Element
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US123896222025High Electron Mobility Transistor Devices Having a Silicided Polysilicon Layer
Globalfoundaries Singapore Pte. Ltd.
0 cites - US123621722025Integration of Compound-semiconductor-based Devices and Silicon-based Devices
Globalfoundries U.S. Inc.
0 cites - US123495002025Photodiode with Insulator Layer Along Intrinsic Region Sidewall
GLOBALFOUNDRIES U.S. Inc.
0 cites - US123392472025Field Effect Transistor with Buried Fluid-based Gate and Method
Globalfoundries U.S. Inc.
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- US123362852025Field Effect Transistor with Shallow Trench Isolation Features Within Source/drain Regions
GLOBALFOUNDRIES U.S. Inc.
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- US122819962025Semiconductor Structure Including Photodiode-based Fluid Sensor and Methods
Globalfoundries U.S. Inc.
0 cites - US122439352025High Electron Mobility Transistor Devices Having a Silicided Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - US121319042024Semiconductor Structure with Semiconductor-on-insulator Region and Method
Globalfoundries U.S. Inc.
0 cites - US121193832024Transistor with Multi-level Self-aligned Gate and Source/drain Terminals and Methods
Globalfoundries U.S. Inc.
0 cites - US120877642024Device Integration Schemes Leveraging a Bulk Semiconductor Substrate Having a <111> Crystal Orientation
Globalfoundries U.S. Inc.
0 cites - US120466332024Airgap Structures in Auto-doped Region Under One or More Transistors
GLOBALFOUNDRIES U.S. Inc.
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- US120280532024Structure Including Resistor Network for Back Biasing FET Stack
Globalfoundries U.S. Inc.
0 cites - US120028782024Implanted Isolation for Device Integration on a Common Substrate
Globalfoundries U.S. Inc.
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- US119234462024High Electron Mobility Transistor Devices Having a Silicided Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - US119013042024Integrated Circuit Structure with Fluorescent Material, and Related Methods
Globalfoundries U.S. Inc.
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- US118625112024Field-effect Transistors with a Crystalline Body Embedded in a Trench Isolation Region
Globalfoundries U.S. Inc.
0 cites - US118429402023Semiconductor Structure Having a Thermal Shunt Below a Metallization Layer and Integration Schemes
Globalfoundries U.S. Inc.
0 cites - US117770432023Photodetectors with Substrate Extensions Adjacent Photodiodes
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US117642252023Field Effect Transistor with Shallow Trench Isolation Features Within Source/drain Regions
GLOBALFOUNDRIES U.S. Inc.
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- US117495592023Bulk Substrates with a Self-aligned Buried Polycrystalline Layer
Globalfoundries U.S. Inc.
0 cites - 0 cites
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- US116644122023Structure Providing Poly-resistor Under Shallow Trench Isolation and Above High Resistivity Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - US116463512023Transistor with Multi-level Self-aligned Gate and Source/drain Terminals and Methods
Globalfoundries U.S. Inc.
0 cites - US116371732023Structure Including Polycrystalline Resistor with Dopant-including Polycrystalline Region Thereunder
Globalfoundries U.S. Inc.
0 cites - US116161272023Symmetric Arrangement of Field Plates in Semiconductor Devices
Globalfoundries U.S. Inc.
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- US115880562023Structure with Polycrystalline Active Region Fill Shape(s), and Related Method
GLOBALFOUNDRIES U.S. Inc.
0 cites - US115814502023Photodiode And/or Pin Diode Structures with One or More Vertical Surfaces
GLOBALFOUNDRIES U.S. Inc.
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- US115691702023Substrate with a Buried Conductor Under an Active Region for Enhanced Thermal Conductivity and RF Shielding
Globalfoundries U.S. Inc.
0 cites - US115693742023Implanted Isolation for Device Integration on a Common Substrate
Globalfoundries U.S. Inc.
0 cites - US115455492023Semiconductor Structures with Body Contact Regions Embedded in Polycrystalline Semiconductor Material
Globalfoundries U.S. Inc.
0 cites - US115455772023Semiconductor Structure with In-device High Resistivity Polycrystalline Semiconductor Element and Method
Globalfoundries U.S. Inc.
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