Patents/Inventors

Sipeng Gu

Clifton Park, NYUS16 patents

18 Patents

US125324502026
Method of Forming a 4F2 DRAM Including Buried Bitline
Applied Materials, Inc.
0 cites
US125324512026
DRAM Transistor Including Horizonal Body Contact
Applied Materials, Inc.
0 cites
US124577312025
Bottom Contact Formation for 4F 2 Vertical DRAM
Applied Materials, Inc.
0 cites
US123693122025
Vertical Finfet Formation Using Directional Deposition
Applied Materials, Inc.
0 cites
US119555332024
Ion Implantation to Reduce Nanosheet Gate Length Variation
Applied Materials, Inc.
0 cites
US119088572024
Semiconductor Devices Having Late-formed Isolation Structures
Globalfoundries U.S. Inc.
0 cites
US119089172024
Gate Structures
GLOBALFOUNDRIES Inc.
0 cites
US118126702023
Memory Device Comprising a Top via Electrode and Methods of Making Such a Memory Device
Globalfoundries U.S. Inc.
0 cites
US117858602023
Top Electrode for a Memory Device and Methods of Making Such a Memory Device
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117282142023
Techniques for Selective Tungsten Contact Formation on Semiconductor Device Elements
Applied Materials, Inc.
0 cites
US117283832023
Localized Stressor Formation by Ion Implantation
Applied Materials, Inc.
0 cites
US117217282023
Self-aligned Contact
GLOBALFOUNDRIES U.S. Inc.
0 cites
US116644192023
Isolation Method to Enable Continuous Channel Layer
Applied Materials, Inc.
0 cites
US116109722023
Technique for Reducing Gate Induced Drain Leakage in DRAM Cells
Applied Materials, Inc.
0 cites
US115944412023
Handling for High Resistivity Substrates
Applied Materials, Inc.
0 cites
US115694372023
Memory Device Comprising a Top via Electrode and Methods of Making Such a Memory Device
GLOBALFOUNDRIES U.S. Inc.
0 cites
US115630852023
Transistors with Separately-formed Source and Drain
Globalfoundries U.S. Inc.
0 cites
US115455742023
Single Diffusion Breaks Including Stacked Dielectric Layers
Globalfoundries U.S. Inc.
0 cites