Simon Shi-ning Yang

6 Patents

• US121702582024

  Memory Devices Having Vertical Transistors and Methods for Forming the Same

  YANGTZE MEMORY TECHNOLOGIES CO., Ltd.

  0 cites
• US121425752024

  Staircase Etch Control in Forming Three-dimensional Memory Device

  Yangtza Memory Technologies Co., Ltd.

  0 cites
• US121375682024

  Hybrid Bonding Contact Structure of Three-dimensional Memory Device

  YANGTZE MEMORY TECHNOLOGIES CO., Ltd.

  0 cites
• US118056462023

  Three-dimensional Memory Devices and Methods for Forming the Same

  Yangtze Memory Technologies Co., Ltd.

  0 cites
• US117587322023

  Hybrid Bonding Contact Structure of Three-dimensional Memory Device

  Yangtze Memory Technologies Co., Ltd.

  0 cites
• US116996572023

  Three-dimensional Memory Devices Having a Plurality of NAND Strings Located Between a Substrate and a Single Crystalline Silicon Layer

  Yangtze Memory Technologies Co., Ltd.

  0 cites