9 Patents
- US126157752026Backside Gate Line Slit Structure to Reduce Wafer Bow in a Three-dimensional Memory Device Comprising Bonded Devices
Yangzte Memory Technologies Co., Ltd.
0 cites - US125987482026Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125750962026Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124245192025Semiconductor Structure, Method for Manufacturing Semiconductor Structure, and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US124127902025Semiconductor Structure, Memory, and Crack Testing Method
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US122437792025Semiconductor Structure and Method for Manufacturing Semiconductor Structure
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US119555112024Semiconductor Structure and Method for Manufacturing Semiconductor Structure
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US119014052024Semiconductor Structure and Method for Manufacturing Semiconductor Structure
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US118826862024Capacitor and Forming Method Thereof, and DRAM and Forming Method Thereof
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites