Shuang Meng

3 Patents

• US124630442025

  Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device and Systems Including Same

  0 cites
• US119357562024

  Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device and Systems Including Same

  0 cites
• US115606252023

  Vapor Deposition of Molybdenum Using a Bis(alkyl-arene) Molybdenum Precursor

  ENTEGRIS, Inc.

  0 cites