15 Patents
- US125001732025Interconnect Structure with Hybrid Barrier Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124179812025Semiconductor Device Including Graphene Interconnect and Method of Making the Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123005992025Method for Forming Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US122117402025Interconnect Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120682532024Semiconductor Structure with Two-dimensional Conductive Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US120682542024Interconnection Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120626122024Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120516452024Two 2D Capping Layers on Interconnect Conductive Structure to Increase Interconnect Structure Reliability
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119488372024Semiconductor Structure Having Vertical Conductive Graphene and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116826162023Semiconductor Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US116826202023Graded Metallic Liner for Metal Interconnect Structures and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US116705952023Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116520552023Interconnect Structure with Hybrid Barrier Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116409402023Methods of Forming Interconnection Structure Including Conductive Graphene Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116055912023Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites