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Inventors
Shu-mei Lee
Taichung
TW
1 patent
2 Patents
US12213299
2025
DRAM Having Isolation Layer Located Between Capacitor Contact and the Bit Line Structure for Preventing Short Circuit
Winbond Electronics Corp.
0 cites
US11641731
2023
DRAM and Manufacturing Method Therefore
Winbond Electronics Corp.
0 cites