8 Patents
- US126106092026Method of Forming Finfet with Protected Low-k Gate Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125060012025Low-k Feature Formation Processes and Structures Formed Thereby
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US121762062024Varying Temperature Anneal for Film and Structures Formed Thereby
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121486722024Hybrid Fin Structure of Semiconductor Device and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US117156372023Varying Temperature Anneal for Film and Structures Formed Thereby
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117053272023Low-k Feature Formation Processes and Structures Formed Thereby
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites