16 Patents
- US125934642026Dielectric Layer for Nanosheet Protection and Method of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125637972026Semiconductor Device Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125060072025Method of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124566232025Replacement Gate Methods That Include Treating Spacers to Widen Gate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124446082025Structure Having Gate Spacers with Projecting Portions Extending Into a Gate Dielectric
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123763442025Semiconductor Device Comprising Channel Layers with Different Thicknesses
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123362482025Non-conformal Gate Oxide Formation on Finfet
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US123100742025Nanostructure Field-effect Transistor Device and Methods of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122782672025Semiconductor Devices Having Funnel-shaped Gate Structures
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122181972025Gate Oxide of Nanostructure Transistor with Increased Corner Thickness
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119905092024Semiconductor Devices Having Gate Structures with Slanted Sidewalls
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119425562024Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119086952024Replacement Gate Methods That Include Treating Spacers to Widen Gate
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118551402023Gate Oxide of Nanostructure Transistor with Increased Corner Thickness
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites