Patents/Inventors

Shriram Shivaraman

Hillsboro, ORUS29 patents

31 Patents

US125751112026
Back-end-of-line 2D Memory Cell
Intel Corporation
0 cites
US123962172025
Encapsulation for Transition Metal Dichalcogenide Nanosheet Transistor and Methods of Fabrication
Intel Corporation
0 cites
US123962542025
Stacked 2D CMOS with Inter Metal Layers
Intel Corporation
0 cites
US123494162025
Transistor Structures with a Metal Oxide Contact Buffer and a Method of Fabricating the Transistor Structures
Intel Corporation
0 cites
US123494382025
Contact Gating for 2D Field Effect Transistors
Intel Corporation
0 cites
US123101012025
Gate Dielectrics for Complementary Metal Oxide Semiconductors Transistors and Methods of Fabrication
Intel Corporation
0 cites
US122782892025
TMD Inverted Nanowire Integration
Intel Corporation
0 cites
US122667202025
Transistors with Monocrystalline Metal Chalcogenide Channel Materials
Intel Corporation
0 cites
US122667292025
Angled Etch to Enable Tin Removal from Selected Sidewalls
Intel Corporation
0 cites
US121913952025
Dual Gate Control for Trench Shaped Thin Film Transistors
Intel Corporation
0 cites
US121838312024
Self-aligned Contacts for Thin Film Transistors
Intel Corporation
0 cites
US121763882024
Transition Metal Dichalcogenide Nanowires and Methods of Fabrication
Intel Corporation
0 cites
US121661222024
Field-effect Transistor (FET) with Self-aligned Ferroelectric Capacitor and Methods of Fabrication
Intel Corporation
0 cites
US121258952024
Transition Metal Dichalcogenide (TMD) Layer Stack for Transistor Applications and Methods of Fabrication
Intel Corporation
0 cites
US121194092024
Multi-layer Crystalline Back Gated Thin Film Transistor
Intel Corporation
0 cites
US120481652024
Ferroelectric Capacitors and Methods of Fabrication
Intel Corporation
0 cites
US120094332024
Multi-dielectric Gate Stack for Crystalline Thin Film Transistors
Intel Corporation
0 cites
US119978472024
Thin Film Transistors with Spacer Controlled Gate Length
Intel Corporation
0 cites
US119800372024
Memory Cells with Ferroelectric Capacitors Separate from Transistor Gate Stacks
Intel Corporation
0 cites
US119359562024
TMD Inverted Nanowire Integration
Intel Corporation
0 cites
US119089502024
Charge-transfer Spacers for Stacked Nanoribbon 2D Transistors
Intel Corporation
0 cites
US118627282024
Dual Gate Control for Trench Shaped Thin Film Transistors
Intel Corporation
0 cites
US118430542023
Vertical Architecture of Thin Film Transistors
Intel Corporation
0 cites
US118430582023
Transistor Structures with a Metal Oxide Contact Buffer and a Method of Fabricating the Transistor Structures
Intel Corporation
0 cites
US117643062023
Multi-layer Crystalline Back Gated Thin Film Transistor
Intel Corporation
0 cites
US117424072023
Multilayer High-k Gate Dielectric for a High Performance Logic Transistor
Intel Corporation
0 cites
US117217352023
Thin Film Transistors Having U-shaped Features
Intel Corporation
0 cites
US116902152023
Self-aligned Bitline and Capacitor via Formation
Intel Corporation
0 cites
US116582222023
Thin Film Transistor with Charge Trap Layer
Intel Corporation
0 cites
US116535022023
Fefet with Embedded Conductive Sidewall Spacers and Process for Forming the Same
Intel Corporation
0 cites
US115881022023
Semiconductor Material for Resistive Random Access Memory
Intel Corporation
0 cites