Patents/Inventors

Shogo Mochizuki

Mechanicville, NYUS55 patents

42 Patents

US126044962026
Epitaxy Everywhere Based Self-aligned Direct Backside Contact
International Business Machines Corporation
0 cites
US125987802026
Gate-all-around Transistors with Hybrid Orientation
International Business Machines Corporation
0 cites
US125987892026
Self-aligned Backside Contact
International Business Machines Corporation
0 cites
US125882652026
Semiconductor Structure with Enhanced Placeholder Position Margin
International Business Machines Corporation
0 cites
US125817192026
Fabrication of Silicon Germanium Channel and Silicon/silicon Germanium Dual Channel Field-effect Transistors
International Business Machines Corporation
0 cites
US125751572026
Nanosheet with Dual Isolation Regions Separated by Buried Inner Spacer
International Business Machines Corporation
0 cites
US125686452026
Vertical Field Effect Transistor with Self-aligned Backside Trench Epitaxy
International Business Machines Corporation
0 cites
US125686522026
Forming Gate All Around Device with Silicon-germanium Channel
International Business Machines Corporation
0 cites
US125686612026
Self-aligned Backside Trench Epitaxy for Low Contact Resistivity
International Business Machines Corporation
0 cites
US125686832026
Single Stack Dual Channel Gate-all-around Nanosheet with Strained PFET and Bottom Dielectric Isolation NFET
International Business Machines Corporation
0 cites
US125572602026
Stacked-fet SRAM Cell with Bottom Pfet
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125573592026
Self-aligned Backside Contact with Protruding Source/drain
International Business Machines Corporation
0 cites
US125503852026
Contact Resistance of Nanosheet Transistor
International Business Machines Corporation
0 cites
US124842502025
Horizontally Stacked Nanosheet Gate All Around Device Structure
International Business Machines Corporation
0 cites
US124314692025
Vertically Stacked FET with Strained Channel
International Business Machines Corporation
0 cites
US124190792025
Field Effect Transistor with Backside Source/drain
International Business Machines Corporation
0 cites
US124023522025
Unipolar-fet Implementation in Stacked-fet CMOS
International Business Machines Corporation
0 cites
US123962122025
Gate All-around Device with Through-stack Nanosheet 2D Channel
International Business Machines Corporation
0 cites
US122794522025
Stacked Complementary Transistor Structure for Three-dimensional Integration
International Business Machines Corporation
0 cites
US122680202025
Source or Drain Template for Reducing Strain Loss in Spaced-apart Nanosheet Channels
International Business Machines Corporation
0 cites
US122680262025
High Aspect Ratio Contact Structure with Multiple Metal Stacks
International Business Machines Corporation
0 cites
US122611732025
Semiconductor Device with Strained Channel
International Business Machines Corporation
0 cites
US122508352025
Isolation Between Vertically Stacked Nanosheet Devices
International Business Machines Corporation
0 cites
US122373252025
Three-dimensional Field Effect Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US121912082025
Dual Strained Semiconductor Substrate and Patterning
International Business Machines Corporation
0 cites
US121549852024
Moon-shaped Bottom Spacer for Vertical Transport Field Effect Transistor (VTFET) Devices
International Business Machines Corporation
0 cites
US121426362024
Sidewall Epitaxy Encapsulation for Nanosheet I/O Device
International Business Machines Corporation
0 cites
US121320982024
Uniform Interfacial Layer on Vertical Fin Sidewalls of Vertical Transport Field-effect Transistors
International Business Machines Corporation
0 cites
US121192642024
Non-step Nanosheet Structure for Stacked Field-effect Transistors
International Business Machines Corporation
0 cites
US121193462024
Vertical Field-effect Transistor with Wrap-around Contact Structure
International Business Machines Corporation
0 cites
US120466732024
Vertical Transistor and Method of Forming the Vertical Transistor
International Business Machines Corporation
0 cites
US119964802024
Vertical Transistor with Late Source/drain Epitaxy
International Business Machines Corporation
0 cites
US119844932024
Formation of Nanosheet Transistor Channels Using Epitaxial Growth
International Business Machines Corporation
0 cites
US119787832024
Vertical Fin Field Effect Transistor Devices with Reduced Top Source/drain Variability and Lower Resistance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119234382024
Field-effect Transistor with Punchthrough Stop Region
International Business Machines Corporation
0 cites
US118483572023
Strained Superlattice
International Business Machines Corporation
0 cites
US118376042023
Forming Stacked Nanosheet Semiconductor Devices with Optimal Crystalline Orientations Around Devices
International Business Machine Corporation
0 cites
US118309462023
Bottom Source/drain for Fin Field Effect Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118175022023
Three-dimensional Field Effect Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118045222023
Sidewall Epitaxy Encapsulation for Nanosheet I/O Device
International Business Machines Corporation
0 cites
US117570362023
Moon-shaped Bottom Spacer for Vertical Transport Field Effect Transistor (VTFET) Devices
International Business Machines Corporation
0 cites
US115629062023
Low Resistance Source Drain Contact Formation with Trench Metastable Alloys and Laser Annealing
GLOBALFOUNDRIES Inc.
0 cites