17 Patents
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- US123362172025Flat STI Surface for Gate Oxide Uniformity in Fin FET Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123157612025Interconnection Structure and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites - 0 cites
- US121192672024Method for Manufacturing Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121007672024Strained Gate Semiconductor Device Having an Interlayer Dielectric Doped with Large Species Material
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120876432024Structure and Formation Method of Fin-like Field Effect Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120466622024Semiconductor Device Structure with Barrier Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120092622024Semiconductor Device Having Planar Transistor and Finfet
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119490142024Fin Field Effect Transistor (finfet) Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119424192024Etch Stop Layer in Integrated Circuits
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119293282024Conductive Contact Having Barrier Layers with Different Depths
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117842402023Semiconductor Device Structure with Barrier Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116707042023Semiconductor Device Structure with Barrier Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116036022023Method for Controlling Electrochemical Deposition to Avoid Defects in Interconnect Structures
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US115980162023Electrochemical Plating System and Method of Using
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US115519792023Method for Manufacturing Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites