10 Patents
- US125139762025Silicon Carbide Semiconductor Device and Power Conversion Device
MITSUBISHI ELECTRIC CORPORATION
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- US121319062024Method for Fabricating Silicon Carbide Semiconductor Device and Power Conversion Device Using the Silicon Carbide Semiconductor Device
MITSUBISHI ELECTRIC CORPORATION
0 cites - US120574962024Silicon Carbide Semiconductor Device and Power Converter
MITSUBISHI ELECTRIC CORPORATION
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- US116827232023Silicon Carbide Semiconductor Device and Power Converter
MITSUBISHI ELECTRIC CORPORATION
0 cites - US116463692023Silicon Carbide Semiconductor Device Having a Conductive Layer Formed Above a Bottom Surface of a Well Region So as Not to Be in Ohmic Connection with the Well Region and Power Converter Including the Same
MITSUBISHI ELECTRIC CORPORATION
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