14 Patents
- US124696982025Wafer Having Silicon Substrate with Suppressed Fractures, Semiconductor Device, and Method for Manufacturing the Wafer
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
0 cites - US122666982025Nitride Semiconductor Including Multi-portion Nitride Region
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
0 cites - US121703182024Nitride Semiconductor, Semiconductor Device, and Method for Manufacturing Nitride Semiconductor
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
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- US121426462024Nitride Semiconductor, Semiconductor Device, and Method for Manufacturing Nitride Semiconductor
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
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- US120742032024Nitride Crystal, Optical Device, Semiconductor Device, and Method for Manufacturing Nitride Crystal
OSAKA UNIVERSITY
0 cites - US119555202024Nitride Semiconductor with Multiple Nitride Regions of Different Impurity Concentrations, Wafer, Semiconductor Device and Method for Manufacturing the Same
KABUSHIKI KAISHA TOSHIBA
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- US116770062023Nitride Crystal, Optical Device, Semiconductor Device, and Method for Manufacturing Nitride Crystal
OSAKA UNIVERSITY
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