18 Patents
- US126047232026Metal Capping Layer for Reducing Gate Resistance in Semiconductor Devices
TAIWAN SEMICONDICTOR MANUFACTURING COMPANY, Ltd
0 cites - US124842752025Gate Structures for Multi-gate Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124143292025Forming Low-resistance Capping Layer Over Metal Gate Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US123100782025Method of Forming Metal Gate Fin Electrode Structure by Etching Back Metal Fill
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122888112025Metal Gate for Gate-all-around Devices and Methods for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122551042025Semiconductor Device and Method of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121702802024Method of Manufacturing Gate Structure and Method of Manufacturing Fin-field Effect Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US120949482024Forming Low-resistance Capping Layer Over Metal Gate Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120402352024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119617322024Controlling Threshold Voltages Through Blocking Layers
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119359572024Geometry for Threshold Voltage Tuning on Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118550832023Gate Structure, Fin Field-effect Transistor, and Method of Manufacturing Fin-field Effect Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
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