Patents/Inventors

Shih-chieh Chang

Taipei CityTW54 patents

53 Patents

US126158012026
Multi-gate Transistors Having Deep Inner Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US126106062026
Methods of Forming Gate Structures with Uniform Gate Length
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US126046792026
Deposition Equipment with Adjustable Temperature Source
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125686672026
In-situ Straining Epitaxial Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites
US124740352025
Lighting Device with Regions of Differing Spectral Ranges
DELTA ELECTRONICS, Inc.
0 cites
US124646392025
Semiconductor Package Having Flow-guiding Grooves and Circuit Board Thereof
CHIPBOND TECHNOLOGY CORPORATION
0 cites
US124462552025
Semiconductor Structure with Source/drain Multi-layer Structure and Method for Forming the Same
Parabellum Strategic Oppurtunities Fund LLC
0 cites
US124462542025
Semiconductor Device and Methods of Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124329532025
Finfet Structures and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124023932025
Finfet EPI Channels Having Different Heights on a Stepped Substrate
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123362662025
Methods of Forming Gate Structures with Uniform Gate Length
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US122659042025
Apparatus and Method for Neural Network Computation
Industrial Technology Research Institute
0 cites
US122603212025
Data Feature Augmentation System and Method for Low-precision Neural Network
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
0 cites
US122496502025
Finfet Device and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122119382025
Finfet Device and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122117522025
Finfet Device and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121549512024
Germanium Tin Gate-all-around Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121487942024
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121426812024
Semiconductor Device Having a Shaped Epitaxial Region with Shaping Section
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121426832024
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121426632024
Method for Forming Source/drain Contacts
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121193942024
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121193922024
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121070152024
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lanthanum Oxide Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120878462024
Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120807612024
Fully Strained Channel
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120211432024
P-type Strained Channel in a Fin Field Effect Transistor (finfet) Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120211422024
Method of Forming Source/drain Epitaxial Stacks
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US120092082024
Deposition Equipment with Adjustable Temperature Source
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119905502024
Semiconductor Structure with Source/drain Multi-layer Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119743672024
Lighting Device
DELTA ELECTRONICS, Inc.
0 cites
US119731272024
Semiconductor Structure with Source/drain Structure Having Modified Shape
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119359552024
Semiconductor Device and Methods of Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
USD10188912024
Sterilization Device
DELTA ELECTRONICS, Inc.
0 cites
USD10170622024
Sterilization Device
DELTA ELECTRONICS, Inc.
0 cites
USD10170612024
Sterilization Device
DELTA ELECTRONICS, Inc.
0 cites
USD10147742024
Sterilization Device
DELTA ELECTRONICS, Inc.
0 cites
USD10147752024
Sterilization Device
DELTA ELECTRONICS, Inc.
0 cites
USD10147732024
Sterilization Device
DELTA ELECTRONICS, Inc.
0 cites
US118551762023
Finfet Structure with Doped Region
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118548112023
Finfet Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118174992023
P-type Strained Channel in a Fin Field Effect Transistor (finfet) Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118174922023
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117929232023
Storage Device for Flexible Circuit Packages and Carrier Thereof
CHIPBOND TECHNOLOGY CORPORATION
0 cites
US117768512023
Semiconductor Device with Multi-layered Source/drain Regions Having Different Dopant Concentrations and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117698172023
Method for Forming Source/drain Contacts
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US117643012023
Finfet Device and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117217602023
Dopant Concentration Boost in Epitaxially Formed Material
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116462312023
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
0 cites
US116265182023
Finfet Device and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116007032023
Germanium Tin Gate-all-around Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US115693832023
Method of Forming Source/drain Epitaxial Stacks
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US115453992023
Finfet EPI Channels Having Different Heights on a Stepped Substrate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites