103 Patents
- US125987872026Field Effect Transistor with Dual Layer Isolation Structure and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125934752026Field Effect Transistor with Isolation Structure and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US125638162026Method for Forming Sidewall Spacers Disposed Above Mask Layer and Semiconductor Devices Fabricated Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125573762026Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125074402025Multi-layer Channel Structures and Methods of Fabricating the Same in Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124827852025Trim Free Wafer Bonding Methods and Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124842982025Semiconductor Structure with Self-aligned Backside Power Rail
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124647502025Semiconductor Device and Formation Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124647532025Fin-like Field Effect Transistor Patterning Methods for Achieving Fin Width Uniformity
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124648122025Semiconductor Device Structure Including Forksheet Transistors and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124648142025Method of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124531472025Semiconductor Structure and Method of Fabricating the Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US124463052025Uniform Gate Width for Nanostructure Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US124329702025Semiconductor Devices with Backside Power Rail and Backside Self-aligned Via
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124190922025Fin Structures Having Varied Fin Heights for Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124190942025Semiconductor Device with Trimmed Channel Region and Method of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124143572025Self-aligned Metal Gate for Multigate Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124024052025Integration of Multiple Fin Stuctures on a Single Substrate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US123961912025Isolation Structures of Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123962462025Semiconductor Integrated Circuit Including Gate-all-around Fets with Nanosheet Channels and Fin-like Fets
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - 0 cites
- US123827172025Semiconductor Device and Method of Forming Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123763432025Self-aligned Spacers for Multi-gate Devices and Method of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123763652025Nanosheet Devices with Hybrid Structures and Methods of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123693662025Convergent Fin and Nanostructure Transistor Structure and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123693692025Field Effect Transistor with Asymmetrical Source/drain Region and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123226532025Self-aligned Metal Gate for Multigate Device and Method of Forming Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123242252025Self-aligned Structure for Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123242292025Semiconductor Device Structure Including Forksheet Transistors and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123175282025Gate Isolation Feature and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123175422025Semiconductor Device with Backside Self-aligned Power Rail and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123007232025Transistor Including Downward Extending Silicide
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123007312025Multigate Device with Air Gap Spacer and Backside Rail Contact and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US122667042025Semiconductor Devices Including Horizontal Gate-all-around (hgaa) Nanostructure Transistors and Methods of Forming
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121913052025Integration of Silicon Channel Nanostructures and Silicon-germanium Channel Nanostructures
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121836782024Backside Power Rail Structure and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121837992024Semiconductor Device with Gate Isolation Features and Fabrication Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121838082024Reducing Parasitic Capacitance for Gate-all-around Device by Forming Extra Inner Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US121703342024Isolation Structures and Methods of Forming the Same in Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121488122024Nano-sheet-based Devices Having Inner Spacer Structures or Gate Portions with Variable Dimensions
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121258772024Nanostructure Field-effect Transistor Device with Dielectric Layer for Reducing Substrate Leakage or Well Isolation Leakage and Methods of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121070872024Semiconductor Device with Gate Isolation Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US120876362024Semiconductor Device Including a Finfet Structure and Method for Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120741672024Hybrid Scheme for Improved Performance for P-type and N-type Finfets
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120573852024Integrated Circuits with Backside Power Rails
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120516932024Method for Manufacturing Semiconductor Structure with Isolation Strips
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120517382024Isolation Structures of Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US120403292024Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120403712024Multi-layer Channel Structures and Methods of Fabricating the Same in Field-effect Transistors Preliminary Class
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120338992024Self-aligned Metal Gate for Multigate Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120211232024Semiconductor Devices with Backside Power Rail and Backside Self-aligned Via
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120211362024Gate Isolation Feature and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120092612024Nanosheet Devices with Hybrid Structures and Methods of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US119903742024Method for Forming Sidewall Spacers and Semiconductor Devices Fabricated Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US119844882024Multigate Device with Air Gap Spacer and Backside Rail Contact and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119730792024Integration of Multiple Fin Structures on a Single Substrate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119617632024Self-aligned Metal Gate for Multigate Device and Method of Forming Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119619152024Capacitance Reduction for Back-side Power Rail Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119489732024Gate-all-around Field-effect Transistor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119424782024Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119425132024Semiconductor Structure and Method of Fabricating the Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - 0 cites
- US119014562024Finfet Devices with a Backside Power Rail and a Backside Self-aligned via Disposed Between Dielectric Fins
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118761192024Semiconductor Device with Gate Isolation Features and Fabrication Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118627342024Self-aligned Spacers for Multi-gate Devices and Method of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US118549022023Integrated Circuits with Buried Interconnect Conductors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US118550782023Semiconductor Device Structure Including Forksheet Transistors and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118550962023Uniform Gate Width for Nanostructure Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - 0 cites
- US118483292023Semiconductor Structure with Self-aligned Backside Power Rail
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118429652023Backside Power Rail Structure and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118375042023Self-aligned Structure for Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118240582023Method of Forming Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118175042023Isolation Structures and Methods of Forming the Same in Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US118044892023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117989442023Integration of Silicon Channel Nanostructures and Silicon-germanium Channel Nanostructures
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US117990192023Gate Isolation Feature and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117642862023Reducing Parasitic Capacitance for Gate-all-around Device by Forming Extra Inner Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117422802023Integrated Circuits with Backside Power Rails
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117424152023Fin-like Field Effect Transistor Patterning Methods for Achieving Fin Width Uniformity
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117355912023Semiconductor Devices with Dielectric Fins and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- 0 cites
- US116826972023Fin Recess Last Process for Finfet Fabrication
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116705502023Nanostructure Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116643782023Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116521602023Fin-like Field Effect Transistor Patterning Methods for Achieving Fin Width Uniformity
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116370422023Self-aligned Metal Gate for Multigate Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - 0 cites
- 0 cites
- US116109772023Methods of Forming Nano-sheet-based Devices Having Inner Spacer Structures with Different Widths
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115814152023Multi-layer Channel Structures and Methods of Fabricating the Same in Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115750272023Dummy Dielectric Fin Design for Parasitic Capacitance Reduction
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites