Patents/Inventors

Shesh Mani Pandey

Saratoga Springs, NYUS26 patents

24 Patents

US126158032026
Transistor with a Primary Gate Wrapping a Floating Secondary Gate
Globalfoundries U.S. Inc.
0 cites
US125816862026
Metal Oxide Semiconductor Devices and Integration Methods
Globalfoundries U.S. Inc.
0 cites
US125298462026
Waveguide Cores Surrounded by an Airgap
Globalfoundries U.S. Inc.
0 cites
US125074342025
Metal Oxide Semiconductor Devices and Methods of Making Thereof
Globalfoundries U.S. Inc.
0 cites
US124890132025
Semiconductor-on-insulator Field-effect Transistors Including Stress-inducing Components
Globalfoundries U.S. Inc.
0 cites
US124811962025
Optical Phase Shifter with One or More Integrated Thermoelectric Devices
Globalfoundries U.S. Inc.
0 cites
US124463072025
Structure and Method of Forming Spacers on Unfaceted Raised Source/drain Regions
Globalfoundries U.S. Inc.
0 cites
US122782782025
Bipolar Junction Transistors with a Base Layer Participating in a Diode
Globalfoundries U.S. Inc.
0 cites
US122768312025
Enlarged Multilayer Nitride Waveguide for Photonic Integrated Circuit
Globalfoundries U.S. Inc.
0 cites
US121764272024
Bipolar Transistor and Gate Structure on Semiconductor Fin and Methods to Form Same
GLOBALFOUNDRIES U.S. Inc.
0 cites
US120094122024
Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119715722024
Optical Waveguide with Stacked Cladding Material Layers
Globalfoundries U.S. Inc.
0 cites
US119676362024
Lateral Bipolar Junction Transistors with an Airgap Spacer
Global Foundries U.S. Inc.
0 cites
US119619012024
Bipolar Transistor Structure with Base Protruding from Emitter/collector and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US119359462024
Silicon-controlled Rectifiers in a Silicon-on-insulator Technology
Globalfoundries U.S. Inc.
0 cites
US119234172024
Lateral Bipolar Junction Transistors with a Back-gate
Globalfoundries U.S. Inc.
0 cites
US118944502024
Lateral Bipolar Transistor with Emitter and Collector Regions Including Portions Within In-insulator Layer Cavities and Method
Globalfoundries U.S. Inc.
0 cites
US118815232024
Heterojunction Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118699582024
Heterojunction Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118551972023
Vertical Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118483742023
Bipolar Junction Transistors Including a Portion of a Base Layer Inside a Cavity in a Dielectric Layer
Globalfoundries U.S. Inc.
0 cites
US118357642023
Multiple-core Heterogeneous Waveguide Structures Including Multiple Slots
Globalfoundries U.S. Inc.
0 cites
US118030092023
Photonics Structures Having a Locally-thickened Dielectric Layer
Globalfoundries U.S. Inc.
0 cites
US117497272023
Bipolar Junction Transistors with Duplicated Terminals
Globalfoundries U.S. Inc.
0 cites