Sheng-yuan Chang

5 Patents

• US125326662026

  Method for Manufacturing a Memory Device Using Multiple Etching Processes

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US123241642025

  Alignment Mark for MRAM Device and Method

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US122626422025

  Method of Fabricating Magneto-resistive Random Access Memory (MRAM)

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US120482502024

  Method of Fabricating Magneto-resistive Random Access Memory (MRAM)

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US118496442023

  Method of Fabricating Magneto-resistive Random Access Memory (MRAM)

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites