Patents/Inventors

Sheng-yao Huang

KaohsiungTW6 patents

7 Patents

US123288982025
High Voltage Semiconductor Device Including Buried Oxide Layer
UNITED MICROELECTRONICS Corp.
0 cites
US120403962024
High Voltage Semiconductor Device Including Buried Oxide Layer
UNITED MICROELECTRONICS Corp.
0 cites
US120276292024
Oxide Semiconductor Field Effect Transistor
UNITED MICROELECTRONICS Corp.
0 cites
US118699532024
High Voltage Transistor Device and Method for Fabricating the Same
UNITED MICROELECTRONICS Corp
0 cites
US117217022023
Fabrication Method of Fin Transistor
United Microelectronics Corp.
0 cites
US116317712023
Oxide Semiconductor Field Effect Transistor
UNITED MICROELECTRONICS Corp.
0 cites
US116265152023
High Voltage Semiconductor Device Including Buried Oxide Layer and Method for Forming the Same
UNITED MICROELECTRONICS Corp.
0 cites