26 Patents
- US126219982026Method and Structures Pertaining to Improved Ferroelectric Random-access Memory (feram)
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US125934542026Ferroelectric Tunnel Junction Structure with L-shaped Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124577512025Interfacial Layer with High Texture Uniformity for Ferroelectric Layer Enhancement
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124329292025Ferroelectric Memory Device with Blocking Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124190562025Integrated Circuit and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123693272025MFM Device with an Enhanced Bottom Electrode
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123566302025Semiconductor Device and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122389342025Method of Fabricating Semiconductor Device Comprising Ferroelectric Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121711042024Method and Structures Pertaining to Improved Ferroelectric Random-access Memory (feram)
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121676112024Feram MFM Structure with Selective Electrode Etch
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US120824212024Semiconductor Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120571542024Method for Efficiently Waking Up Ferroelectric Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118567882023Semiconductor Device and Method of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118495882023Semiconductor Device and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118442862023Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118007202023Memory Cell Having a Top Electrode Interconnect Arranged Laterally from a Recess
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117857772023Feram MFM Structure with Selective Electrode Etch
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117514012023Integrated Circuit and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117514852023Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117232132023Method and Structures Pertaining to Improved Ferroelectric Random-access Memory (feram)
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117232922023RRAM Cell Structure with Laterally Offset BEVA/TEVA
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117069302023Semiconductor Device and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115878812023Substrate Structure Including Embedded Semiconductor Device
ADVANCED SEMICONDUCTOR ENGINEERING, Inc.
0 cites - US115576092023Integrated Circuit Structure and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites